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Datasheet GAL16V8A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 34 | GAL16V8A | HIGH PERFORMANCE E2CMOS PLD GAL16V8
High Performance E2CMOS PLD Generic Array Logic™ Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 50% to 75% REDUCTION IN POWER FROM BIPOL |
 Lattice Semiconductor |
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| 33 | GAL16V8A-10LJ | HIGH PERFORMANCE E2CMOS PLD GAL16V8
High Performance E2CMOS PLD Generic Array Logic™ Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 50% to 75% REDUCTION IN POWER FROM BIPOL |
Lattice Semiconductor |
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| 32 | GAL16V8A-10LJI | HIGH PERFORMANCE E2CMOS PLD GAL16V8
High Performance E2CMOS PLD Generic Array Logic™ Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 50% to 75% REDUCTION IN POWER FROM BIPOL |
Lattice Semiconductor |
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| 31 | GAL16V8A-10LP | HIGH PERFORMANCE E2CMOS PLD GAL16V8
High Performance E2CMOS PLD Generic Array Logic™ Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology • 50% to 75% REDUCTION IN POWER FROM BIPOL |
Lattice Semiconductor |
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