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Datasheet GA50TS120K Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GA50TS120K | Short Circuit Rated Ultra-FastTM Speed IGBT
] HALF-BRODGE IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT
PRELIMINARY
GA50TS120K
VCES=1200V VCE(on) typ.=2.5V
@VGE=15V,IC=50A
Features
• •
• • • | XIAN | igbt |
GA5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GA500TD60U | HALF-BRIDGE IGBT DUAL INT-A-PAK
PD - 50048D
GA500TD60U
"HALF-BRIDGE" IGBT DUAL INT-A-PAK
Features
• Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparal International Rectifier igbt | | |
2 | GA50JT06-258 | Junction Transistor GA50JT06-258
Normally – OFF Silicon Carbide Junction Transistor
Features
225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Compatible with 5 V TTL Gate Drive Temperature Independent Switching Performanc GeneSiC transistor | | |
3 | GA50JT06-CAL | OFF Silicon Carbide Junction Transistor Die Datasheet
GA50JT06-CAL
Normally – OFF Silicon Carbide Junction Transistor
Features
• 210°C maximum operating temperature • Gate Oxide Free SiC switch • Exceptional Safe Operating Area • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacit GeneSiC transistor | | |
4 | GA50JT12-247 | Normally - OFF Silicon Carbide Junction Transistor Normally – OFF Silicon Carbide Junction Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperatur GeneSiC transistor | | |
5 | GA50JT12-CAL | Junction Transistor Die Datasheet
GA50JT12-CAL
Normally – OFF Silicon Carbide Junction Transistor
Features
210 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capaci GeneSiC transistor | | |
6 | GA50JT17-247 | Junction Transistor Normally – OFF Silicon Carbide Junction Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperatur GeneSiC transistor | | |
7 | GA50JT17-CAL | Junction Transistor Die Datasheet
GA50JT17-CAL
Normally – OFF Silicon Carbide Junction Transistor
Features
210 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capaci GeneSiC transistor | |
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Número de pieza | Descripción | Fabricantes | |
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