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Datasheet GA200TS60U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | GA200TS60U | HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT PD -5.058B
PRELIMINARY
GA200TS60U
Ultra-FastTM Speed IGBT
VCES = 600V VCE(on) typ. = 1.8V
@VGE = 15V, IC = 200A
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • |
 International Rectifier |
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| 2 | GA200TS60UPBF | IGBT www.DataSheet.co.kr
GA200TS60UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
FEATURES
• Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switch |
 Vishay Siliconix |
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| 1 | GA200TS60UX | Ultra-FastTM Speed IGBT www.DataSheet.co.kr
Bulletin I27221 03/06
GA200TS60UX
"HALF-BRIDGE" IGBT INT-A-PAK
Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFREDTM anti |
International Rectifier |
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