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GA-945GMF-S2 データシート PDF

この部品の機能は「Motherboard User Manual」です。


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部品番号
GA-945GMF-S2

Motherboard User Manual


GA-945GM-S2 / GA-945GMF-S2 Intel® CoreTM 2 Extreme / CoreTM 2 Duo Intel® Pentium® D / Pentium® 4 LGA775 Processor Motherboard User's Manual Rev. 1002 12ME-945GMS2R-1002R * The WEEE marking on the


Gigabyte
Gigabyte

データシート pdf



文字列「 GA945GMFS2 」「 GA-9 」で始まる検索結果です。

部品説明

GA-945GM-S2

Motherboard User Manual

GA-945GM-S2 / GA-945GMF-S2 Intel® CoreTM 2 Extreme / CoreTM 2 Duo Intel® Pentium® D / Pentium® 4 LGA775 Processor Motherboard User's Manual Rev. 1002 12ME-945GMS2R-1002R * The WEEE marking on the product indicates this product must not be disposed of with user's other househo

Gigabyte
Gigabyte

 データシート pdf


SGA-9189

Silicon Germanium HBT Amplifier

Preliminary Preliminary Product Description Sirenza Microdevices’ SGA-9189 is a high performance amplifier designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium Heterostructure Bip

ETC
ETC

 データシート pdf


SGA-9189

Reliability Qualification Report

Reliability Qualification Report SGA-9189 Products Qualified by Similarity SGA-9289 March, 2001 522 Almanor Ave., Sunnyvale, Ca 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com SGA-9189 Reliability Qualification Report Introduction Stanford Microdevices’ SGA-9189 i

Stanford Microdevices
Stanford Microdevices

 データシート pdf


SGA-9189Z

Medium Power Discrete SiGe Transistor

Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) proce

Sirenza Microdevices
Sirenza Microdevices

 データシート pdf


SGA-9289

Silicon Germanium HBT Amplifier

DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits Abstract Stanford Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. The amplifier is manufactured using the latest Silicon Germanium Heterostructure B

Stanford Microdevices
Stanford Microdevices

 データシート pdf


SGA-9289Z

Medium Power Discrete SiGe Transistor

Preliminary Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (

Sirenza Microdevices
Sirenza Microdevices

 データシート pdf

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