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Datasheet G8422 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | G8422 | InGaAs PIN photodiode PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features Applications
l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm
s Specifications / Absolute maximum rati |
 Hamamatsu Corporation |
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| 2 | G8422-03 | InGaAs PIN photodiode PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features Applications
l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm
s Specifications / Absolute maximum rati |
Hamamatsu Corporation |
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| 1 | G8422-05 | InGaAs PIN photodiode PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features Applications
l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm
s Specifications / Absolute maximum rati |
Hamamatsu Corporation |
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