Datasheet G5852-203 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	G5852-203	InGaAs PIN photodiode PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm s Specifications / Absolute maximum rati	Hamamatsu Corporation	diode

G58 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	G5805	Single Cell Li-Ion Battery Linear Charger Global Mixed-mode Technology G5805 Single Cell Li-Ion Battery Linear Charger Features No External Power MOSFET, Sense Resistor or Blocking Diode Required 1% Regulation Voltage Accuracy Programmable Constant Charge Current Limit up to 800mA Automatic Recharge Complete Pre-Charge, Co	Global Mixed-mode Technology	battery
2	G5842	GaAsP photodiode	Hamamatsu Corporation	diode
3	G5851-103	InGaAs PIN photodiode	Hamamatsu Corporation	diode
4	G5851-11	InGaAs PIN photodiode	Hamamatsu Corporation	diode
5	G5851-13	InGaAs PIN photodiode	Hamamatsu Corporation	diode
6	G5851-203	InGaAs PIN photodiode	Hamamatsu Corporation	diode
7	G5851-21	InGaAs PIN photodiode	Hamamatsu Corporation	diode

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Número de pieza	Descripción	Fabricantes	PDF
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