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Datasheet G4B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | G4B | GLASS PASSIVATED JUNCTION RECTIFIER G4A THRU G4J
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 600 Volts
*
Case Style G4
Forward Current - 3.0 Amperes
FEATURES
♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package ♦ 3.0 Ampere operation at TA |
 General Semiconductor |
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| 13 | G4BC20F | IRG4BC20F
PD - 91602A
IRG4BC20F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generati |
 International Rectifier |
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| 12 | G4BC20FD | IRG4BC20FD
PD 91601A
IRG4BC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution a |
International Rectifier |
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| 11 | G4BC20KD | IRG4BC20KD
PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides |
International Rectifier |
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