データシート PDF 検索 - DataSheet.jp

G3B データシート PDF

この部品の機能は「Glass Passivated Junction Rectifier」です。


検索結果を表示する

部品番号
G3B

GLASS PASSIVATED JUNCTION RECTIFIER


G3A THRU G3M GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts D * Forward Current - 3.0 Amperes FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passi


General Semiconductor
General Semiconductor

データシート pdf


G3B

Diode Switching 100V 3A 2-Pin Case G-3



New Jersey Semiconductor
New Jersey Semiconductor

データシート pdf



文字列「 G3 」「 3B 」で始まる検索結果です。

部品説明

G30

Voltage-Controlled Attenuator Module

%& &' ( )*( +, . / 0 1 2 34 5 - . / 0 1 2 34 5 *( ,* 63+%7( ) 8%+,9 : 0 7*;2 34 5 <0' &' 8 2 34 5 " , !$ "= > ?!/ " " $ "! !$ $ !? # $ # ! " ?" > = " ?! $ " #! # @ ! ! ! !$ ! # ! > >! A $ ! = !? : " 0B ! &$ 7 $! # C ? " = ! 7( ! / , &7, ), D D " !! D D ;

Tyco Electronics
Tyco Electronics

 データシート pdf


G3000TF250

Anode Shorted Gate Turn-Off Thyristor

Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Maximum continu

IXYS
IXYS

 データシート pdf


G3000TF450

Anode Shorted Gate Turn-Off Thyristor

Date:- 28th April 2013 Data Sheet Issue:- 2 Anode Shorted Gate Turn-Off Thyristor Types G3000TF450 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Maximum continu

IXYS
IXYS

 データシート pdf


G3018

N-CHANNEL MOSFET

Pb Free Plating Product ISSUED DATE :2005/11/30 REVISED DATE : G3018 Description Features N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this device

GTM
GTM

 データシート pdf


G3018K

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/11/11 REVISED DATE : G3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8 640mA The G3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient

GTM
GTM

 データシート pdf


G301K

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : G301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 1 640mA The G301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient a

GTM
GTM

 データシート pdf

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