Datasheet G30N60C3D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	G30N60C3D	HGTG30N60C3D HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high	Intersil Corporation

G30N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
G30N60	HGTG30N60 HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MO	ETC
G30N60A4D	SMPS Series N-Channel IGBT HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Fairchild Semiconductor
G30N60HS	High Speed IGBT SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - mo	Infineon

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Número de pieza	Descripción	Fabricantes	PDF
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