G30N60B3 データシート PDFこの部品の機能は「Hgtg30n60b3」です。 |
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部品番号 |
G30N60B3 HGTG30N60B3 HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The I Fairchild Semiconductor |
文字列「 G30N60B3 」「 30N60B3 」で始まる検索結果です。 |
部品説明 |
G30N60B3D HGTG30N60B3D HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high Fairchild Semiconductor |
30N60B3D HGTG30N60B3D Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of Fairchild Semiconductor |
HGT4E30N60B3DS 60A/ 600V/ UFS Series N-Channel IGBT HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These d Fairchild Semiconductor |
HGTG30N60B3 60A/ 600V/ UFS Series N-Channel IGBT HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conducti Fairchild Semiconductor |
HGTG30N60B3 60A/ 600V/ UFS Series N-Channel IGBT HGTG30N60B3 Data Sheet January 2000 File Number 4444.2 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the l Intersil Corporation |
HGTG30N60B3D 60A/ 600V/ UFS Series N-Channel IGBT HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These d Fairchild Semiconductor |
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