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G30N60B3 データシート PDF

この部品の機能は「Hgtg30n60b3」です。


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部品番号
G30N60B3

HGTG30N60B3


HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The I


Fairchild Semiconductor
Fairchild Semiconductor

データシート pdf



文字列「 G30N60B3 」「 30N60B3 」で始まる検索結果です。

部品説明

G30N60B3D

HGTG30N60B3D

HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


30N60B3D

HGTG30N60B3D

Data Sheet HGTG30N60B3D April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


HGT4E30N60B3DS

60A/ 600V/ UFS Series N-Channel IGBT

HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These d

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


HGTG30N60B3

60A/ 600V/ UFS Series N-Channel IGBT

HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conducti

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


HGTG30N60B3

60A/ 600V/ UFS Series N-Channel IGBT

HGTG30N60B3 Data Sheet January 2000 File Number 4444.2 60A, 600V, UFS Series N-Channel IGBT The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the l

Intersil Corporation
Intersil Corporation

 データシート pdf


HGTG30N60B3D

60A/ 600V/ UFS Series N-Channel IGBT

HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These d

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf

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