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Datasheet FZT751 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | FZT751 | PNP HIGH PERFORMANCE TRANSISTOR Features
BVCEO > -60V IC = -3A High Continuous Current ICM = -6A Peak Pulse Current Low Saturation Voltage VCE(sat) < -300mV @ -1A Complementary NPN Type: FZT651 Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qual |
Diodes |
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3 | FZT751 | PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
ISSUE 2 FEBRUARY 1995 FEATURES * 60 Volt VCEO * 3 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAIL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Co |
Zetex Semiconductors |
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2 | FZT751 | High Performance Transistor www.DataSheet.co.kr
SMD Type
High Performance Transistor FZT751
SOT-223
Transistors
Unit: mm
+0.2 3.50-0.2
0.1max +0.05 0.90-0.05
Features
60 Volt VCEO. 3 Amp continuous current. Low saturation voltage.
+0.2 6.50-0.2
+0.1 3.00-0.1
+0.2 0.90-0.2 +0.3 7.00-0.3
4
1
2 2.9 4.6
3
+0.1 0.70-0.1 |
Guangdong Kexin Industrial |
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1 | FZT751Q | PNP HIGH PERFORMANCE TRANSISTOR Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
Features
• BVCEO > -60V • IC = -3A High Continuous Current • ICM = -6A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -300mV @ -1A • Complementary NPN Type: |
Diodes |
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Número de pieza | Descripción | Fabricantes | |
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