FZT658 データシート PDFこの部品の機能は「NPN SilICon Planar High Voltage Transistor」です。 |
検索結果を表示する |
部品番号 |
FZT658 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - OCTOBER 1995 FEATURES * 400 Volt VCEO * Low saturation voltage FZT658 C E COMPLEMENTARY TYPE PARTMARKING DETAIL FZT758 FZT658 C B ABSOLUT Zetex Semiconductors |
文字列「 FZT658 」「 658 」で始まる検索結果です。 |
部品説明 |
1165892 High power NPN silicon power transistors 1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features: • Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc. • Pb-free package Multicomp |
1165899 High power NPN silicon transistors 1165899 TO-3 High power NPN silicon transistors. Features: • High voltage capability. • High current capability. • Fast switching speed. Applications: Switch mode power supplies. Flyback and forward single transistor low power converters. Description: The BUX48/A silicon m Multicomp |
1N5658 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 1500 WATT UNIDIRECTIONAL TRANSIENT Microsemi |
1N5658 Silicon Avalanche Diodes Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N56 Series FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance •100% surge test Littelfuse |
1N5658 Diode TVS Single Uni-Dir 89.2V 1.5KW 2-Pin DO-13 New Jersey Semiconductor |
1N5658A Diode ( Rectifier ) American Microsemiconductor |
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