FSYE23A0D3 データシート PDFこの部品の機能は「Radiation Hardened/ Segr Resistant N-channel Power Mosfets」です。 |
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部品番号 |
FSYE23A0D3 Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs FSYE23A0D, FSYE23A0R Data Sheet May 1999 File Number 4742 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Ha Intersil Corporation |
文字列「 FSYE23A0D3 」「 23A0D3 」で始まる検索結果です。 |
部品説明 |
0230300L Silicon Controlled Rectifier Microsemi Corporation |
0230300L Silicon Controlled Rectifier Microsemi Corporation |
2N2303 Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) 2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL Central Semiconductor |
2N2303 Trans GP BJT NPN 15V 6-Pin Case U New Jersey Semiconductor |
5082-2303 Schottky Barrier Diodes for General Purpose Applications Schottky Barrier Diodes for General Purpose Applications Technical Data 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Character Agilent(Hewlett-Packard) |
5082-2303 (5082-2xxx) Schottky Barrier Diode w w w .D at aS he et 4U .c om HP |
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