FSYC360R4 データシート PDFこの部品の機能は「Radiation Hardened/ Segr Resistant N-channel Power Mosfets」です。 |
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部品番号 |
FSYC360R4 Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs FSYC360D, FSYC360R Data Sheet February 2000 File Number 4791 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series Intersil Corporation |
文字列「 FSYC360R4 」「 360R4 」で始まる検索結果です。 |
部品説明 |
1N3604 (1N3xxx) Silicon Diodes Silicon Diodes DO-35 Case Switching Diodes TYPE NO. VRRM (V) MAX 100 100 75 75 75 75 50 40 75 100 50 75 40 75 35 70 100 100 100 100 75 50 80 IO (mA) MAX 150 150 75 75 75 75 200 150 150 150 200 150 150 150 150 200 150 150 150 150 150 200 200 VF (V) MAX 1.0 1.0 1.0 0.85 1.0 1.0 1.0 Central |
23HS3604-02 Hybrid Stepper Motors HYBRID STEPPING MOTORS 0.9˚ 2-PHASE 1.8˚ 3.6˚ 23HS SERIES 1.8° Key Features I High Torque I High Accuracy I Smooth Movement General Specifications Bi-polar Model Number 23HS0402-02 23HS0403-02 23HS0404-01 23HS0406 23HS0411 23HS0412 23HS0413 23HS1407 23HS1408 23HS2403 23 ETC |
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide NEC |
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR Free Datasheet http:/// Free Datasheet http:/// New Jersey Semi-Conductor |
2SC3604 Trans GP BJT NPN 10V 0.065A 4-Pin Micro-X New Jersey Semiconductor |
2SK3604-01L N-CHANNEL SILICON POWER MOSFET 2SK3604-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS Fuji Electric |
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