FSYC264R1 データシート PDFこの部品の機能は「Radiation Hardened/ Segr Resistant N-channel Power Mosfets」です。 |
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部品番号 |
FSYC264R1 Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs FSYC264D, FSYC264R July 1998 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs sp Intersil Corporation |
文字列「 FSYC264R1 」「 264R1 」で始まる検索結果です。 |
部品説明 |
2N2641 DUAL AMPLIFIER TRANSISTORS NPN SILICON Motorola Semiconductors |
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2N2641A Trans GP BJT NPN 45V 0.03A 6-Pin LCC-2 New Jersey Semiconductor |
2SC2641 TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) Toshiba Semiconductor |
2SD2641 Silicon NPN Triple Diffused Planar Transistor 2SD2641Darlington Equivalent circuit B C (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) Symbol Rati Sanken Electric |
2SK2641-01 N-channel MOS-FET 2SK2641-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 500V 0,9Ω 10A 100W > Outline Drawing > Applications Switching Regulators U Fuji Electric |
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