FSYC260R4 データシート PDFこの部品の機能は「Radiation Hardened/ Segr Resistant N-channel Power Mosfets」です。 |
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部品番号 |
FSYC260R4 Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs FSYC260D, FSYC260R July 1998 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs sp Intersil Corporation |
文字列「 FSYC260R4 」「 260R4 」で始まる検索結果です。 |
部品説明 |
1422604 Bobbin Type Inductors C&D Technologies |
1422604 Bobbin Type Inductors C&D Technologies |
1422604C Bobbin Type Inductors www.murata-ps.com 1400 Series Bobbin Type Inductors FEATURES n RoHS compliant n Radial format n -40°C to 85°C operating temperature n Up to 13A IDC n 10μH to 22mH n Low DC resistance n Fully tinned leads n PCB mounting hole n Low temperature dependence n Backward compatible Murata |
2N2604 Chip Type 2C2605 Geometry 0220 Polarity NPN Data Sheet No. 2C2605 Chip Type 2C2605 Geometry 0220 Polarity NPN Generic Packaged Parts: 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N2604, 2N2605, 2N3789, 2N3799, 2N38 Semicoa |
2N2604 PNP Silicon Transistor Texas |
2N2604 (2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices 2N2604 2N2605 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Powe Microsemi Corporation |
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