FSYC163D1 データシート PDFこの部品の機能は「Radiation Hardened/ Segr Resistant N-channel Power Mosfets」です。 |
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部品番号 |
FSYC163D1 Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs FSYC163D, FSYC163R Data Sheet May 1999 File Number 4740 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hard Intersil Corporation |
文字列「 FSYC163D1 」「 163D1 」で始まる検索結果です。 |
部品説明 |
1-5316318-1 Connectors Fine Pitch Stacking Connectors (Parallel Board-to-Board) Fine Pitch SMT Stacking Connectors (Parallel Board-to-Board) 0.4mm Fine Stack Connectors (Pages 7 thru 11) ■ 0.4mm contact pitch ■ 1.0mm and 1.5mm stacking 0.5mm Fine Stack C Tyco |
1-5316318-x Connectors Fine Pitch Stacking Connectors (Parallel Board-to-Board) Fine Pitch SMT Stacking Connectors (Parallel Board-to-Board) 0.4mm Fine Stack Connectors (Pages 7 thru 11) ■ 0.4mm contact pitch ■ 1.0mm and 1.5mm stacking 0.5mm Fine Stack C Tyco |
1631 Dual and Quad Data-bus Isolators C&D Technologies |
1N1631 Diode ( Rectifier ) American Microsemiconductor |
2SB1631 Silicon PNP epitaxial planar type(For power amplification) Power Transistors 2SB1631 Silicon PNP epitaxial planar type For power amplification Unit: mm s Features 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation volt Panasonic Semiconductor |
2SD1631 Silicon NPN Epitaxial Type TRANSISTOR 2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm · High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA Toshiba Semiconductor |
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