FSYA9150D1 データシート PDFこの部品の機能は「Radiation Hardened/ Segr Resistant P-channel Power Mosfets」です。 |
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部品番号 |
FSYA9150D1 Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs FSYA9150D, FSYA9150R Data Sheet October 1998 File Number 4582 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiatio Intersil Corporation |
文字列「 FSYA9150D1 」「 9150D1 」で始まる検索結果です。 |
部品説明 |
BD91501MUV 2.55V/0.4A 1.8V/0.3A Output 2ch Synchronous Buck Converter Integrated FET Datasheet 2.55V/0.4A 1.8V/0.3A Output 2ch Synchronous Buck Converter Integrated FET BD91501MUV ●Description ROHM’s buck converter BD91501MUV is a 2ch output power supply designed to produce a low voltage including 2.55V/0.4A and 1.8V/0.3A from 3.3V power supply line. Offer ROHM Semiconductor |
BU91501KV-M Multi- function LCD Segment Drivers Datasheet LCD Segment Drivers Multi- function LCD Segment Drivers BU91501KV-M MAX 204 Segment(51SEGx4COM) General Description The BU91501KV-M is 1/4 or 1/3-Duty general-purpose LCD driver that can be used for frequency display in electronic tuners under the control of a micr ROHM Semiconductor |
PTFB191501E Thermally-Enhanced High Power RF LDMOS FETs Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features i Infineon Technologies |
PTFB191501F Thermally-Enhanced High Power RF LDMOS FETs Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features i Infineon Technologies |
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