FSYA254D3 データシート PDFこの部品の機能は「Radiation Hardened/ Segr Resistant N-channel Power Mosfets」です。 |
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部品番号 |
FSYA254D3 Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs FSYA254D, FSYA254R Data Sheet March 1999 File Number 4677 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Ha Intersil Corporation |
文字列「 FSYA254D3 」「 254D3 」で始まる検索結果です。 |
部品説明 |
2543 PROTECTED QUAD POWER DRIVER 2543 UDN/UDQ2543B OUT4 K OUT3 GROUND GROUND OUT2 K OUT1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 IN 4 IN3 ENABLE GROUND GROUND V CC IN 2 IN 1 PROTECTED QUAD POWER DRIVER Providing interface between low-level logic and power loads to 100 W, the UDx2543B and UDx2543EB quad power dri AllegroMicroSystems |
2SC2543 Silicon NPN Epitaxial 2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25°C) Item Collec Hitachi Semiconductor |
2SC2543 Silicon NPN Epitaxial To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 Renesas |
2SK2543 Silicon N Channel MOS Type Field Effect Transistor 2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2543 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.) l Low leakage current : Toshiba Semiconductor |
54FCT162543 IDT54FCT162543 Integrated Device Technology |
825433 amp connector Framatome |
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