FQU1N60 データシート PDFこの部品の機能は「600v N-channel Mosfet」です。 |
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部品番号 |
FQU1N60 600V N-Channel MOSFET FQD1N60 / FQU1N60 April 2000 QFET FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprie Fairchild Semiconductor |
文字列「 FQU1N60 」「 1N60 」で始まる検索結果です。 |
部品説明 |
FQU1N60C 600V N-Channel MOSFET FQD1N60C / FQU1N60C QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description These N-Channel enhancem ent m ode power f ield ef fect transistors ar e prod uced using F airchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especiall Fairchild Semiconductor |
FQU1N60C 600V N-Channel MOSFET FQD1N60C / FQU1N60C FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V • Low gate charge ( typical 4.8nC) transistors are produced using Corise Semiconductorÿs Kersemi Electronic |
FQU1N60C N-Channel MOSFET 1.3A, 600V, N沟道 场效应晶体管 产品参数规格书 工业型号 公司型号 通俗命名 H FQU1N60C FQD1N60C H1N60U H1N60D 1N60 HAOHAI 封装标识 U: TO-251 D: TO-252 1N60 Series N-Channel MOSFET 包装方式 每管数量 每盒数量 条管装 载带卷� HAOHAI |
01N60P AP01N60P AP01N60P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G D S BVDSS RDS(ON) ID TO-22 Advanced Power Electronics |
1.5CE160A UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi- Central Semiconductor |
1.5CE160CA UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi- Central Semiconductor |
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