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Datasheet FQPF8N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | FQPF8N60 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FQPF8N60
·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Dri |
Inchange Semiconductor |
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3 | FQPF8N60 | 600V N-Channel MOSFET FQP8N60/FQPF8N60
600V N-Channel MOSFET
Features
■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability ■ ROHS product
General Description
This Power MOSFET is produced using AOKE’s advanced p |
AOKE |
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2 | FQPF8N60C | 600V N-Channel MOSFET FQP8N60C/FQPF8N60C
QFET
FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-sta |
Fairchild Semiconductor |
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1 | FQPF8N60CF | 600V N-Channel MOSFET www.DataSheet.co.kr
FQPF8N60CF 600V N-Channel MOSFET
February 2006
FRFET
FQPF8N60CF
600V N-Channel MOSFET
Features
• • • • • • 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capab |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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