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Datasheet FQPF8N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 FQPF8N60   N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQPF8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Dri
Inchange Semiconductor
Inchange Semiconductor
datasheet FQPF8N60 pdf
3 FQPF8N60   600V N-Channel MOSFET

FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability ■ ROHS product General Description This Power MOSFET is produced using AOKE’s advanced p
AOKE
AOKE
datasheet FQPF8N60 pdf
2 FQPF8N60C   600V N-Channel MOSFET

FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-sta
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FQPF8N60C pdf
1 FQPF8N60CF   600V N-Channel MOSFET

www.DataSheet.co.kr FQPF8N60CF 600V N-Channel MOSFET February 2006 FRFET FQPF8N60CF 600V N-Channel MOSFET Features • • • • • • 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capab
Fairchild Semiconductor
Fairchild Semiconductor
datasheet FQPF8N60CF pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

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