FQPF6N60 データシート PDFこの部品の機能は「600v N-channel Mosfet」です。 |
検索結果を表示する |
部品番号 |
FQPF6N60 600V N-Channel MOSFET FQPF6N60 April 2000 QFET FQPF6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar strip Fairchild Semiconductor |
FQPF6N60 600V N-Channel MOSFET Fairchild Semiconductor |
文字列「 FQPF6N60 」「 6N60 」で始まる検索結果です。 |
部品説明 |
FQPF6N60C 600V N-Channel MOSFET FQP6N60C/FQPF6N60C QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has bee Fairchild Semiconductor |
1660 Dual 4 Input OR/NOR Gate Motorola Semiconductors |
16N60 N-Channel Power MOSFET / Transistor SEMICONDUCTOR 16N60 Series RoHS RoHS Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, fast switching speed, low on-state resistance, breakdown voltage rati nELL |
16N60 IXSA16N60 Preliminary Data Sheet Low VCE(sat) IGBT Short Circuit SOA Capability IXSA 16N60 IXSP 16N60 V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 ° IXYS |
16N60 FCP16N60 FCP16N60 / FCPF16N60 600V N-Channel MOSFET December 2008 FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. Rds(on) = 0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche te Fairchild Semiconductor |
1N3660 Diode Switching 100V 35A 2-Pin DO-21 New Jersey Semiconductor |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |