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Datasheet FQP12N65 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | FQP12N65 | 12A N-Channel MOSFET FQP12N65/FQPF12N65
650V, 12A N-Channel MOSFET
General Description
The FQP12N65 & FQPF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss |
 Oucan Semi |
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| 2 | FQP12N65 | N-Channel MOSFET 极限参数(除非特殊说明，TC=25°C)
参数名称
漏源电压
栅源电压
漏极电流 漏极脉冲电流
TC=25°C TC=100°C
耗散功率（TC=25°C） - 大于 25°C 每摄氏度减少
单脉冲雪崩能量（注 1）
工作结温范围
贮存温度范围
符号
VDS VGS
ID
IDM
PD |
 TOBA |
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| 1 | FQP12N65C | N-Channel MOSFET 12A, 650V, N沟道 场效应晶体管 产品参数规格书
工业型号
FQP12N65C FQPF12N65C
公司型号
H12N65P H12N65F
通俗命名 12N65
H HAOHAI
封装标识
P: TO-220AB F: TO-220FP
包装方式
条管装 盒装箱装
每管数量 50Pcs
12N65 Series
N-Channel MOSFET
每盒数量 1000P |
 HAOHAI |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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