FQA7N80C データシート PDFこの部品の機能は「800v N-channel Mosfet」です。 |
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部品番号 |
FQA7N80C 800V N-Channel MOSFET FQA7N80C 800V N-Channel MOSFET September 2006 QFET FQA7N80C 800V N-Channel MOSFET Features • • • • • • 7.0A, 800V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss Fairchild Semiconductor |
文字列「 FQA7N80 」「 7N80C 」で始まる検索結果です。 |
部品説明 |
FQA7N80 800V N-Channel MOSFET QFET $ $ $ $ $ $ % &'())*+,- .Ω/*,-)* 0 1 2) 3 01 -43 -))5 ! 6 !!7 " Fairchild Semiconductor |
FQA7N80C_F109 N-Channel MOSFET FQA7N80C_F109 — N-Channel QFET® MOSFET FQA7N80C_F109 N-Channel QFET® MOSFET 800 V, 7 A, 1.9 Ω Features • 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A • Low Gate Charge (Typ. 27nC) • Low Crss (Typ. 10pF) • 100% Avalanche Tested • RoHS Compliant Fairchild Semiconductor |
17809T BA17809T BA178!!T / FP series Regulator ICs Standard 78 series, 3-pin regulator BA178!!T / FP series The BA178!!T and BA178!!FP series are 3pin fixed positive output voltage regulators. These regulators are used to provide a stabilized output voltage from a fluctuati ROHM Semiconductor |
17N80C2 SPP17N80C2 Preliminary data SPP17N80C2 SPB17N80C2 Cool MOS™ Power Transistor Feature · · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extre Infineon Technologies |
17N80C2 SPP17N80C2 Preliminary data SPP17N80C2 SPB17N80C2 Cool MOS™ Power Transistor Feature · · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extre Infineon Technologies |
17N80C3 SPP17N80C3 CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low e Infineon Technologies |
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