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FQA6N70 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
1 FQA6N70

700V N-Channel MOSFET

FQA6N70 December 2000 QFET FQA6N70 700V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the

Fairchild Semiconductor
Fairchild Semiconductor
FQA6N70 データシート pdf



FQA6 Datasheet ( データシート ) - 検索結果

部品番号 部品説明 メーカ PDF
FQA6N90

900V N-Channel MOSFET

   QFET   $ $ $ $ $ $ % &'())*+,- (Ω.*,-)* /   0 &) 1 /0 -21     -))3 !  4 !!5  "          

Fairchild Semiconductor
Fairchild Semiconductor
FQA6N70 データシート pdf
FQA6N70

700V N-Channel MOSFET

FQA6N70 December 2000 QFET FQA6N70 700V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Fairchild Semiconductor
Fairchild Semiconductor
FQA6N70 データシート pdf
FQA65N06

60V N-Channel MOSFET

FQA65N06 May 2001 QFET FQA65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimi

Fairchild Semiconductor
Fairchild Semiconductor
FQA6N70 データシート pdf
FQA6N80

800V N-Channel MOSFET

FQA6N80 September 2000 QFET FQA6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to m

Fairchild Semiconductor
Fairchild Semiconductor
FQA6N70 データシート pdf
FQA6N90C_F109

900V N-Channel MOSFET

FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 30 nC) • Low Crss ( typical 11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compl

Fairchild Semiconductor
Fairchild Semiconductor
FQA6N70 データシート pdf
FQA65N20

200V N-Channel MOSFET

FQA65N20 August 2001 QFET FQA65N20 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mi

Fairchild Semiconductor
Fairchild Semiconductor
FQA6N70 データシート pdf
FQA6N90C

900V N-Channel MOSFET

FQA6N90C 900V N-Channel MOSFET QFET FQA6N90C 900V N-Channel MOSFET Features • • • • • • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ®

Fairchild Semiconductor
Fairchild Semiconductor
FQA6N70 データシート pdf


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