Datasheet FQA11N40 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FQA11N40	400V N-Channel MOSFET QFET $ $ $ $ $ $ %% &'())+,) (&Ω-,%)* . / 01 2 ./ 0)2 %))3 ! 4 !!5 "	Fairchild Semiconductor

FQA11 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FQA11N90C	900V N-Channel MOSFET FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability	Fairchild Semiconductor
FQA11N90	900V N-Channel MOSFET FQA11N90 September 2000 QFET FQA11N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Fairchild Semiconductor
FQA11N90C_F109	MOSFET ( Transistor ) FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested • RoHS compli	Fairchild Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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