FQA10N80 データシート PDFこの部品の機能は「800v N-channel Mosfet」です。 |
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部品番号 |
FQA10N80 800V N-Channel MOSFET FQA10N80 September 2000 QFET FQA10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar s Fairchild Semiconductor |
文字列「 FQA10N80 」「 10N80 」で始まる検索結果です。 |
部品説明 |
FQA10N80C 800V N-Channel MOSFET FQA10N80C 800V N-Channel MOSFET September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features • • • • • • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability Fairchild Semiconductor |
FQA10N80C_F109 N-Channel QFET MOSFET FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS compliant Fairchild Semiconductor |
10N80 N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 10N80 ·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) ·Avalanche Energy Specified ·Fast Switchin Inchange Semiconductor |
10N80 N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N80 800V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitab Unisonic Technologies |
10N80 N-Channel Power MOSFET / Transistor SEMICONDUCTOR 10N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 10A, 800Volts DESCRIPTION The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of nELL |
2SA1080 Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 APPLICATIONS ·Designed for medium power amplifier applicati Inchange Semiconductor |
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