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FQA10N80 データシート PDF

この部品の機能は「800v N-channel Mosfet」です。


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部品番号
FQA10N80

800V N-Channel MOSFET


FQA10N80 September 2000 QFET FQA10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar s


Fairchild Semiconductor
Fairchild Semiconductor

データシート pdf



文字列「 FQA10N80 」「 10N80 」で始まる検索結果です。

部品説明

FQA10N80C

800V N-Channel MOSFET

FQA10N80C 800V N-Channel MOSFET September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features • • • • • • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


FQA10N80C_F109

N-Channel QFET MOSFET

FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS compliant

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


10N80

N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 10N80 ·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) ·Avalanche Energy Specified ·Fast Switchin

Inchange Semiconductor
Inchange Semiconductor

 データシート pdf


10N80

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 10N80 800V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitab

Unisonic Technologies
Unisonic Technologies

 データシート pdf


10N80

N-Channel Power MOSFET / Transistor

SEMICONDUCTOR 10N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 10A, 800Volts DESCRIPTION The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of

nELL
nELL

 データシート pdf


2SA1080

Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 APPLICATIONS ·Designed for medium power amplifier applicati

Inchange Semiconductor
Inchange Semiconductor

 データシート pdf

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