FJNS4207R データシート PDFこの部品の機能は「PNP Epitaxial SilICon Transistor」です。 |
検索結果を表示する |
部品番号 |
FJNS4207R PNP Epitaxial Silicon Transistor FJNS4207R FJNS4207R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement Fairchild Semiconductor |
文字列「 FJNS4207 」「 4207R 」で始まる検索結果です。 |
部品説明 |
2SC4207 Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit: mm • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~700 • Excellen Toshiba Semiconductor |
2SK4207 Field Effect Transistor 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK4207 Swiching Regulator Applications 15.9max. Ф3.2±0.2 1.0 4.5 9.0 4.8max. 1 2 3 Unit: mm z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance:|Yfs| Toshiba Semiconductor |
ADF4207 Dual RF PLL Frequency Synthesizers a Dual RF PLL Frequency Synthesizers ADF4206/ADF4207/ADF4208 GENERAL DESCRIPTION FEATURES ADF4206: 550 MHz/550 MHz ADF4207: 1.1 GHz/1.1 GHz ADF4208: 2.0 GHz/1.1 GHz 2.7 V to 5.5 V Power Supply Selectable Charge Pump Supply (VP) Allows Extended Tuning Voltage in 3 V Systems Sele Analog Devices |
AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4 Agilent(Hewlett-Packard) |
AT42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4 Agilent(Hewlett-Packard) |
B25667B4207A375 Power Factor Correction PhaseCap Power Capacitors Power Factor Correction PhaseCap Construction Dielectric: Polypropylene film Gas-impregnated / dry type Concentric winding Wave cut Extruded round aluminum can with stud Provided with ceramic discharge module Triple safety system B25667B4207 EPCOS |
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