データシート PDF 検索 - DataSheet.jp

FJNS4207R データシート PDF

この部品の機能は「PNP Epitaxial SilICon Transistor」です。


検索結果を表示する

部品番号
FJNS4207R

PNP Epitaxial Silicon Transistor


FJNS4207R FJNS4207R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement


Fairchild Semiconductor
Fairchild Semiconductor

データシート pdf



文字列「 FJNS4207 」「 4207R 」で始まる検索結果です。

部品説明

2SC4207

Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit: mm • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~700 • Excellen

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf


2SK4207

Field Effect Transistor

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK4207 Swiching Regulator Applications 15.9max. Ф3.2±0.2 1.0 4.5 9.0 4.8max. 1 2 3 Unit: mm z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance:|Yfs|

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf


ADF4207

Dual RF PLL Frequency Synthesizers

a Dual RF PLL Frequency Synthesizers ADF4206/ADF4207/ADF4208 GENERAL DESCRIPTION FEATURES ADF4206: 550 MHz/550 MHz ADF4207: 1.1 GHz/1.1 GHz ADF4208: 2.0 GHz/1.1 GHz 2.7 V to 5.5 V Power Supply Selectable Charge Pump Supply (VP) Allows Extended Tuning Voltage in 3 V Systems Sele

Analog Devices
Analog Devices

 データシート pdf


AT-42070

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

 データシート pdf


AT42070

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

 データシート pdf


B25667B4207A375

Power Factor Correction PhaseCap

Power Capacitors Power Factor Correction PhaseCap Construction „ „ „ „ „ „ „ Dielectric: Polypropylene film Gas-impregnated / dry type Concentric winding Wave cut Extruded round aluminum can with stud Provided with ceramic discharge module Triple safety system B25667B4207

EPCOS
EPCOS

 データシート pdf

ページ   :   [1]     

scroll

当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。


www.DataSheet.jp      |    2020      |

    メール     |     最新    |     Sitemap