FJN3302R データシート PDFこの部品の機能は「NPN Epitaxial SilICon Transistor」です。 |
検索結果を表示する |
部品番号 |
FJN3302R NPN Epitaxial Silicon Transistor FJN3302R FJN3302R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to Fairchild Semiconductor |
文字列「 FJN3302 」「 3302R 」で始まる検索結果です。 |
部品説明 |
2N3302 GENERAL PURPOSE TRANSISTOR 2N3299 2N3300 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR 2N3301 2N3302 MAXIMUM RATINGS Rating Collector-Emitter Voltage (Applicable to 10 mAdc) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO ic Value 30 60 Motorola Semiconductors |
2N3302 Transistor New Jersey Semi-Conductor |
2N3302 Small Signal Transistors Small Signal Transistors TO-18 Case (Continued) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns) MIN MAX MAX MAX MIN MAX MAX toff (ns) MA Central Semiconductor |
2SC3302 TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION Toshiba Semiconductor |
2SK3302 Silicon N Channel MOS Type Field Effect Transistor 2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.4 S (typ.) • Low Toshiba Semiconductor |
3302 (3302x - 3310x) Three Phase Bridge 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time 3302 - 3310 3302F - 3310F 3302UF - 3310UF ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current @TC VMI |
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