FGPF90N30 データシート PDFこの部品の機能は「Pdp Igbt」です。 |
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部品番号 |
FGPF90N30 PDP IGBT FGPF90N30 300V, 90A PDP IGBT October 2006 FGPF90N30 300V, 90A PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sat) =1.5V @ IC = 60A • High Input Impedance • Fast sw Fairchild Semiconductor |
文字列「 FGPF90N30 」「 90N30 」で始まる検索結果です。 |
部品説明 |
ACE9030 Radio Interface and Twin Synthesiser Mitel Networks Corporation |
AGR09030E Lateral MOSFET AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global syst TriQuint Semiconductor |
AGR19030EF Transistor AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 199 TriQuint Semiconductor |
AM90N30-290B N-Channel MOSFET Analog Power N-Channel 300-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits AM90N30-290B PRODUCT Analog Power |
ANX9030 HDMI Transmitter Product Brief ANX9030 HDMI Transmitter FEATURES z HDMI 1.2 compliant transmitter with HDCP z z z z z z Supports pixel rates beyond 165 Mpix/second Low power consumption of 300 mW typical for 720P or 1080I Supports One Analogix |
B69030 Dual HiQVideo Accelerator 69030 69030 Dual HiQVideo Accelerator with 4MB Embedded Memory Databook Revision 1.3 w w w .D t a S a e h t e U 4 .c m o November 1999 w w w`efmp .D at h S a t e e 4U . m o c Copyright Notice Copyright 1999 Intel Corporation Chips and Technologies, Inc Chips |
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