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FGL60N170D データシート PDF

この部品の機能は「ElectrICal CharacteristICs Of Igbt」です。


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部品番号
FGL60N170D

Electrical Characteristics of IGBT


FGL60N170D October 2001 IGBT FGL60N170D General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. FGL60N170D is designed for the Induct


Fairchild Semiconductor
Fairchild Semiconductor

データシート pdf



文字列「 FGL60N170 」「 60N170D 」で始まる検索結果です。

部品説明

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 データシート pdf


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 データシート pdf


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www.vishay.com VB60170G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency

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 データシート pdf


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Dual High Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com VB60170G-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficie

Vishay
Vishay

 データシート pdf

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