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Datasheet FGAF40N60SMD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FGAF40N60SMD | Field Stop IGBT FGAF40N60SMD 600 V 40 A Field Stop IGBT
May 2013
FGAF40N60SMD
600 V, 40 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ = • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A • High Input Impedance • Fast Swiching: EOFF = 6.5 uJ/A • Tigh |  Fairchild Semiconductor | igbt |
FGA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FGA12-302 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | FGA12-502 | Diode, Rectifier American Microsemiconductor diode | | |
| 3 | FGA120N30D | 300V PDP IGBT
FGA120N30D 300V PDP IGBT
June 2006
FGA120N30D
300V PDP IGBT
Features
• High Current Capability • Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A • High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides low conduction and switching Fairchild Semiconductor igbt | | |
| 4 | FGA15N120AN | NPT Igbt FGA15N120AN
IGBT
FGA15N120AN
General Description
Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and Fairchild Semiconductor igbt | | |
| 5 | FGA15N120AND | IGBT, Insulated Gate Bipolar Transistor
FGA15N120AND
IGBT
FGA15N120AND
General Description
Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters Fairchild Semiconductor igbt | | |
| 6 | FGA15N120ANTD | 1200V NPT Trench IGBT
FGA15N120ANTD 1200V NPT Trench IGBT
May 2006
FGA15N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25°C • Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A Fairchild Semiconductor igbt | | |
| 7 | FGA15N120ANTDTU | IGBT, Insulated Gate Bipolar Transistor FGA15N120ANTDTU — 1200 V, 15 A NPT Trench IGBT
FGA15N120ANTDTU
1200 V, 15 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C
• Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and Fairchild Semiconductor igbt | |
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