データシート PDF 検索 - DataSheet.jp

FGA25N120FTD データシート PDF

この部品の機能は「Field Stop Trench Igbt」です。


検索結果を表示する

部品番号
FGA25N120FTD

Field Stop Trench IGBT


FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT March 2013 FGA25N120FTD 1200 V, 25 A Field Stop Trench IGBT Features • Field Stop Trench Technology • High Speed Switching • Low Saturation Vo


Fairchild Semiconductor
Fairchild Semiconductor

データシート pdf



文字列「 FGA25N120 」「 25N120FTD 」で始まる検索結果です。

部品説明

FGA25N120AN

IGBT

FGA25N120AN IGBT FGA25N120AN General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


FGA25N120AND

IGBT

FGA25N120AND IGBT FGA25N120AND General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


FGA25N120ANTD

NPT Trench IGBT

FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C • Low Switching Loss: Eof

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


FGA25N120ANTDTU

IGBT

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.9

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


FGA25N120ANTD_F109

25A NPT Trench IGBT

FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT April 2013 FGA25N120ANTD/FGA25N120ANTD_F109 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V  @ IC = 25 A and TC

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


16Y25120M2L15J3

Ultrasonic Piezoelectric Atomizing Transducer

Ultrasonic Piezoelectric Atomizing Transducer We are producing ultrasonic piezoelectric atomizing transducers of compact and higher performances. Our specially electrode protection layer of the transducer is far superior to Nickel or Titanium electrode used in traditional transd

ETC
ETC

 データシート pdf

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