Datasheet FDV303N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	FDV303N	N-Channel Digital FET FDV303N Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This d	Fairchild Semiconductor

FDV3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
FDV301N	Digital FET / N-Channel March 1999 FDV301N Digital FET , N-Channel General Description This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-	Fairchild Semiconductor
FDV304P	Digital FET/ P-Channel August 1997 FDV304P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at lo	Fairchild Semiconductor
FDV302P	Digital FET/ P-Channel October 1997 FDV302P Digital FET, P-Channel General Description This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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