FDS2572 データシート PDFこの部品の機能は「150v/ 0.047 Ohms/ 4.9a/ N-channel Ultrafet Trench Mosfet」です。 |
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部品番号 |
FDS2572 150V/ 0.047 Ohms/ 4.9A/ N-Channel UltraFET Trench MOSFET FDS2572 October 2001 FDS2572 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET General Description ® UltraFET devices combine characteristics that enable benchmark efficiency in power conv Fairchild Semiconductor |
文字列「 FDS2572 」「 2572 」で始まる検索結果です。 |
部品説明 |
2SK2572 Silicon N-Channel Power F-MOS Power F-MOS FETs 2SK2572 2SK2572(Tentative) Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 15.5±0.5 3.0±0.3 energy capability guaranteed 4.5 q High-speed q Low q No switching ø3.2±0.1 10.0 26.5±0.5 ON-resistance 5˚ 5˚ 2.0 1.2 secondary breakdow Panasonic Semiconductor |
82572EI (82571EB / 82572EI Gigabit Ethernet Controller 82571EB/82572EI Gigabit Ethernet Controller Networking Silicon Product Datasheet Revision 1.2 August 2006 ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSU Intel Corporation |
AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode ASAHI KASEI [AK2572] AK2572 APC for Burst Mode Applicable Direct Modulation Laser Diode FEATURES ■Temperature compensation programming function (APC_FF) of Bias current (0~85mA) and Modulation current (0~10mA/0~2.2V) responding to the detected temperature by the On-chip tempe AKM |
APL2572 PLL Module Features · +4 dBm Output Level at 2572.5 MHz · Channel Step Size : 1250 kHz · 2nd Harmonic : < -25 dBc · Spurious Level : < -70 dBc · Lock Time : < 10 ms · 19 mA Current Consumption Description The plerowTM PLL synthesizer module was designed for use in wireless and wireli ASB |
FDB2572 N-Channel PowerTrench MOSFET 150V/ 29A/ 54m FDB2572 / FDP2572 September 2002 FDB2572 / FDP2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features • r DS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and R Fairchild Semiconductor |
FDB2572 N-Channel PowerTrench MOSFET SMD Type MOSFET N-Channel PowerTrench MOSFET KDB2572(FDB2572) Features rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4. Kexin |
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