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FDC8878 データシート PDF

この部品の機能は「N-channel Powertrench Mosfet」です。


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部品番号
FDC8878

N-Channel PowerTrench MOSFET


FDC8878 N-Channel PowerTrench® MOSFET FDC8878 N-Channel PowerTrench® MOSFET 30 V, 8.0 A, 16 mΩ Features General Description January 2012 „ Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A „ Max


Fairchild Semiconductor
Fairchild Semiconductor

データシート pdf



文字列「 FDC8878 」「 8878 」で始まる検索結果です。

部品説明

AMC8878

(AMC8878 / AMC8879) LOW NOISE 150mA LOW DROPOUT REGULATOR

AMC DOC. #:AMC8878_D (LF) March 2004  ADD MICROTECH CORP. DESCRIPTION AMC8878/8879 LOW NOISE 150mA LOW DROPOUT REGULATOR FEATURES The AMC8878/8879 series is a low noise, low dropout linear regulator operating from 2.5V to 6.5V input. An external capacit

ADD Microtech
ADD Microtech

 データシート pdf


BD8878FV

Output Coupling Capacitor-less Line Amplifier

Output Coupling Capacitor-less Line Amplifier BD8876FV, BD8878FV Description BD8876FV, BD8878FV are output coupling capacitor-less line amplifiers. These IC have a negative voltage generator built-in and generate the negative voltage from the supply voltage. It is possible to dr

ROHM Semiconductor
ROHM Semiconductor

 データシート pdf


CXD8878Q

TRIPLE DIGITAL MIX EFFECT

********** TRIPLE DIGITAL MIX EFFECT -TOP VIEW- CXD8878Q(1/3) IL08 80 70 60 V DD (+5V) V DD (+5V) GND 51 81 50 90 GND GND 40 VDD (+5V) VDD (+5V) GND 100 31 1 10 20 30 (V DD=+5V) PIN I/O No. I 1 I 2 3 I 4 I 5 I 6 I 7 I 8 I 9 I 10 O 11 O 12

ETC
ETC

 データシート pdf


FDD8878

N-Channel PowerTrench MOSFET

FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET January 2005 FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET 30V, 40A, 15mΩ Features r DS(ON) = 15mΩ, VGS = 10V, ID = 35A r DS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low r DS(ON

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


FDMA8878

Single N-Channel PowerTrench MOSFET

FDMA8878 Single N-Channel Power Trench® MOSFET May 2012 FDMA8878 Single N-Channel Power Trench® MOSFET 30 V, 9.0 A, 16 mΩ Features „ Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A „ Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A „ High performance trench technology for e

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


FDMC8878

N-Channel Power Trench MOSFET

FDMC8878 N-Channel Power Trench® MOSFET February 2007 FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ Features General Description „ Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A „ Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A „ Low Profile - 1mm max in Power 33

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf

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