F28F020 データシート PDFこの部品の機能は「2048(256 X 8) Cmos Flash Memory」です。 |
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部品番号 |
F28F020 2048(256 x 8) CMOS flash memory E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features Intel |
文字列「 F28F020 」「 28F020 」で始まる検索結果です。 |
部品説明 |
28F020 28F020 2048K (256K X 8) CMOS FLASH MEMORY E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX Intel |
Am28F020 2 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory FINAL Am28F020 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retent AMD |
Am28F020A 2 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory FINAL Am28F020A 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby AMD |
CAT28F020 2 Megabit CMOS Flash Memory CAT28F020 2 Megabit CMOS Flash Memory Licensed Intel second source FEATURES s Fast read access time: 90/120 ns s Low power CMOS dissipation: – Active: 30 mA max (CMOS/TTL levels) – Standby: 1 mA max (TTL levels) – Standby: 100 µA max (CMOS levels) s High speed programmin Catalyst Semiconductor |
E28F020-120 28F020 2048K (256K X 8) CMOS FLASH MEMORY E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX Intel Corporation |
E28F020-150 28F020 2048K (256K X 8) CMOS FLASH MEMORY E n n n n n n n 12.0 V ±5% VPP 28F020 2048K (256K X 8) CMOS FLASH MEMORY n n n n Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Noise Immunity Features ±10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing ETOX Intel Corporation |
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