F28F010-65 データシート PDFこの部品の機能は「1024k (128k X 8) Cmos Flash Memory」です。 |
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部品番号 |
F28F010-65 1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Pr Intel Corporation |
文字列「 F28F01065 」「 28F010 」で始まる検索結果です。 |
部品説明 |
28F010 1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 100 000 Erase Program Cycles 12 0V g 5% VPP High-Performance Read 65 ns Maximum Access Time CMOS Intel |
28F010 Search ----- CAT28F010 CAT28F010 1 Megabit CMOS Flash Memory Licensed Intel second source FEATURES I Fast read access time: 90/120 ns I Low power CMOS dissipation: H GEN FR ALO EE LE A D F R E ETM I Commercial, industrial and automotive temperature ranges I On-chip address and data latches I JED Catalyst Semiconductor |
A28F010 1024K (128K x 8) CMOS FLASH MEMORY A28F010 1024K (128K x 8) CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program 1 000 Erase Program Cycles M Intel Corporation |
AM28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory FINAL Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum access time s CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current — No data retention p Advanced Micro Devices |
AM28F010A 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms FINAL Am28F010A 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby c Advanced Micro Devices |
AM28F010A-120EC 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms FINAL Am28F010A 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High performance — Access times as fast as 70 ns s CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby c Advanced Micro Devices |
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