EV2355DN-00A データシート PDFこの部品の機能は「3a Out Step-down Dc/dc Converter」です。 |
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部品番号 |
EV2355DN-00A 3A Out Step-Down DC/DC Converter www.Datasheet.jp EV2355DN-00A 4.75V to 23V In, 3A Out Step-Down DC/DC Converter Monolithic Power Systems EVALUATION BOARD — INITIAL RELEASE GENERAL DESCRIPTION The EV2355DN-00A is the Evaluati MPS |
文字列「 EV2355DN00 」「 2355DN 」で始まる検索結果です。 |
部品説明 |
2SK2355 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ± NEC |
2SK2355-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. 3.0 ± NEC |
79RC32355 IDT Interprise Integrated Communications Processor IDT Interprise Integrated Communications Processor TM TM 79RC32355 Features List RC32300 32-bit Microprocessor – Enhanced MIPS-II ISA – Enhanced MIPS-IV cache prefetch instruction – DSP Instructions – MMU with 16-entry TLB – 8KB Instruction Cache, Integrated Device Technology |
79RC32355 IDT Interprise Integrated Communications Processor IDT Interprise Integrated Communications Processor TM TM 79RC32355 Features List RC32300 32-bit Microprocessor – Enhanced MIPS-II ISA – Enhanced MIPS-IV cache prefetch instruction – DSP Instructions – MMU with 16-entry TLB – 8KB Instruction Cache, Integrated Device Technology |
82355 Bus Master Interface Controller w w w t a .D S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c Intel |
ALN2355 Internally Matched LNA Module plerowTM ALN2355 Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module for the use of the LNA with or without the following gain blocks in the infrastructure equipment of the mobile wireless (CDMA, GS Advanced Semiconductor |
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