EUP8075 データシート PDFこの部品の機能は「Usb-compliant Li-ion Battery Charger Integrated」です。 |
検索結果を表示する |
部品番号 |
EUP8075 USB-Compliant Li-Ion Battery Charger Integrated EUP8075 尔 USB-Compliant Li-Ion Battery Charger Integrated with System Power-Path Management FEATURES z z Integrated Power-Path Management Feature Simultaneously and Independently Powers the System Eutech Microelectronics |
文字列「 EUP8075 」「 8075 」で始まる検索結果です。 |
部品説明 |
EUP8075JIR1 USB-Compliant Li-Ion Battery Charger Integrated EUP8075 尔 USB-Compliant Li-Ion Battery Charger Integrated with System Power-Path Management FEATURES z z Integrated Power-Path Management Feature Simultaneously and Independently Powers the System and Charges the Battery Integrated USB Charge Control with Selectable 100mA and Eutech Microelectronics |
2KG028075JL SWITCHING DIODE CHIPS 2KG028075JL 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075JL is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. This chip has several thicknesses, can suit for different plastic package. Silan Microelectronics |
2KG028075YQ SWITCHING DIODE CHIPS 2KG028075YQ 2KG028075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075YQ is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. When the chip is selected glass package, the chip thickness is 120µm, and Silan Microelectronics |
AD8075 G = +1 and +2 Triple Video Buffers a FEATURES Dual Supply ؎5 V High-Speed Fully Buffered Inputs and Outputs 600 MHz Bandwidth (–3 dB) 200 mV p-p 500 MHz Bandwidth (–3 dB) 2 V p-p 1600 V/s Slew Rate, G = +1 1350 V/s Slew Rate, G = +2 Fast Settling Time: 4 ns Low Supply Current: <30 mA Excellent Video Spe Analog Devices |
APT8075 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise spe Advanced Power Technology |
APT8075 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise spe Advanced Power Technology |
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