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EUP8075 データシート PDF

この部品の機能は「Usb-compliant Li-ion Battery Charger Integrated」です。


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部品番号
EUP8075

USB-Compliant Li-Ion Battery Charger Integrated


EUP8075 尔 USB-Compliant Li-Ion Battery Charger Integrated with System Power-Path Management FEATURES z z Integrated Power-Path Management Feature Simultaneously and Independently Powers the System


Eutech Microelectronics
Eutech Microelectronics

データシート pdf



文字列「 EUP8075 」「 8075 」で始まる検索結果です。

部品説明

EUP8075JIR1

USB-Compliant Li-Ion Battery Charger Integrated

EUP8075 尔 USB-Compliant Li-Ion Battery Charger Integrated with System Power-Path Management FEATURES z z Integrated Power-Path Management Feature Simultaneously and Independently Powers the System and Charges the Battery Integrated USB Charge Control with Selectable 100mA and

Eutech Microelectronics
Eutech Microelectronics

 データシート pdf


2KG028075JL

SWITCHING DIODE CHIPS

2KG028075JL 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075JL is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. This chip has several thicknesses, can suit for different plastic package.

Silan Microelectronics
Silan Microelectronics

 データシート pdf


2KG028075YQ

SWITCHING DIODE CHIPS

2KG028075YQ 2KG028075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075YQ is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. When the chip is selected glass package, the chip thickness is 120µm, and

Silan Microelectronics
Silan Microelectronics

 データシート pdf


AD8075

G = +1 and +2 Triple Video Buffers

a FEATURES Dual Supply ؎5 V High-Speed Fully Buffered Inputs and Outputs 600 MHz Bandwidth (–3 dB) 200 mV p-p 500 MHz Bandwidth (–3 dB) 2 V p-p 1600 V/␮s Slew Rate, G = +1 1350 V/␮s Slew Rate, G = +2 Fast Settling Time: 4 ns Low Supply Current: <30 mA Excellent Video Spe

Analog Devices
Analog Devices

 データシート pdf


APT8075

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise spe

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT8075

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise spe

Advanced Power Technology
Advanced Power Technology

 データシート pdf

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