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EUA2008QIR1 データシート PDF

この部品の機能は「3-w Stereo Class-d Audio Amplifier」です。


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部品番号
EUA2008QIR1

3-W Stereo Class-D Audio Amplifier


3-W Stereo Class-D Audio Amplifier with 32-Step DC Volume Control DESCRIPTION The EUA2008 is a high efficiency, 2 channel bridged-tied load (BTL), class-D audio power amplifier. Operating from a 5V po


Eutech Microelectronics
Eutech Microelectronics

データシート pdf



文字列「 EUA2008QIR1 」「 2008QIR1 」で始まる検索結果です。

部品説明

LM320081

LCD Module

?REP.2ED BY: DATE .- PPRO’/ID BY: DATE LIQUID CRYSTAL DISPLAY GROUP SHARP CORPORATION SPEC No. LC92X1OA FILE No. ISSUE Ott.29,1992 19 Pages PAGE REPRESENTATIVE DIVISION s DUTY Panel SPECIFICATION Development center DEVICE SPECIFICATION for Passive

Sharp
Sharp

 データシート pdf


LM320081

Passive Matric LCD Unit

LM320081 Passive Matrix LCD Unit DESCRIPTION The SHARP LM320081 Passive Matrix LCD consists of 320 × 240 dots with an FSTN, reflective, positive-type panel. LCD Data Sheet FEATURES • Display Format: 320 × 240 • Overall Dimensions: 134 (W) × 96 (H) ×

Sharp
Sharp

 データシート pdf


NCS20081

Operational Amplifier

NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084 Operational Amplifier, Rail-to-Rail Input and Output, 1.2 MHz The NCS2008 series operational amplifiers provide rail−to−rail input and output operation, 1.2 MHz bandwidth, and are available in single, dual, and quad

ON Semiconductor
ON Semiconductor

 データシート pdf


NCV20081

Operational Amplifier

NCS20081, NCV20081, NCS20082, NCV20082, NCS20084, NCV20084 Operational Amplifier, Rail-to-Rail Input and Output, 1.2 MHz The NCS2008 series operational amplifiers provide rail−to−rail input and output operation, 1.2 MHz bandwidth, and are available in single, dual, and quad

ON Semiconductor
ON Semiconductor

 データシート pdf


PTB20081

150 Watts/ 470-860 MHz UHF TV Power Transistor

e PTB 20081 150 Watts, 470–860 MHz UHF TV Power Transistor Description The 20081 is a class AB, NPN, common emitter RF power transistor intended for 28 to 32 Vdc operation across the 470 to 860 MHz UHF TV frequency band. It is rated at 100 watts minimum output power. Ion implan

Ericsson
Ericsson

 データシート pdf


PTFA220081M

High Power RF LDMOS Field Effect Transistor

PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS t

Infineon
Infineon

 データシート pdf

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