ESD5432N データシート PDFこの部品の機能は「Small Power Tvs」です。 |
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部品番号 |
ESD5432N Small Power TVS ESD5432N ESD5432N 2-Lines, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD5432N is a bi-directional TVS (Transient Voltage Suppressor). It is specifi WillSEMI |
文字列「 ESD5432 」「 5432N 」で始まる検索結果です。 |
部品説明 |
2N5432 N-Channel JFETs 2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number 2N5432 2N5433 2N5434 VGS(off) (V) –4 to –10 –3 to –9 –1 to –4 rDS(on) Max (W) 5 7 10 ID(off) Typ (pA) 10 10 10 tON Typ (ns) 2.5 2.5 2.5 FEATURES D D D D D Low On-Resistance: 2N5432 <5 Vishay Siliconix |
2N5432 (2N5xxx) JFET N-Channel Metal Can JFET’s Part No. BVGSS Min. (V) VP Min. (V) @ Max. (V) (V) VD S & 2N5432 2N5433 2N5434 25 4.0 3.0 1.0 10.0 Part No. w w 2N3684 2N3686 2N3822 w .D BV GSS Min. (V) 50 50 50 40 35 30 30 30 25 at h S a (V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0 ee 9.0 4.0 Taitron Components |
2N5432 N-Channel Silicon Junction Field-Effect Transistor 8/2014 2N5432, 2N5433, 2N5494 N-Channel Silicon Junction Field-Effect Transistor ∙ Low rDS(on) ∙ Excellent Switching ∙ Low Cutoff Current Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -25V Continuous Forward Gate Current 100 mA Conti InterFET |
2N5432 Trans JFET N-CH 400mA 3-Pin TO-52 New Jersey Semiconductor |
2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5006 PACKAGE DIMENSIONS (in mm) 1 NEC |
5432 Quad 2-Input OR Gates 5432 DM5432 DM7432 Quad 2-Input OR Gates June 1989 5432 DM5432 DM7432 Quad 2-Input OR Gates General Description This device contains four independent gates each of which performs the logic OR function Features Y Alternate Military Aerospace device (5432) is available Contact National Semiconductor |
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