EPC3479G データシート PDFこの部品の機能は「Flyback Transformer」です。 |
検索結果を表示する |
部品番号 |
EPC3479G Flyback Transformer Flyback Transformer ELECTRONICS INC. EPC3479G & EPC3479G-LF Inductance (µH ± 5%) @ 100 KHz, 1.0 Vrms 9.0 Pri. DCR (mΩ Typ.) 13.5 270 2.4 Pri. Aux. Sec. • 25W PoE Applications • Bobbin PCA Electronics |
文字列「 EPC3479 」「 3479G 」で始まる検索結果です。 |
部品説明 |
EPC3479G-LF Flyback Transformer Flyback Transformer ELECTRONICS INC. EPC3479G & EPC3479G-LF Inductance (µH ± 5%) @ 100 KHz, 1.0 Vrms 9.0 Pri. DCR (mΩ Typ.) 13.5 270 2.4 Pri. Aux. Sec. • 25W PoE Applications • Bobbin : UL94V-0 Recognized Materials • Storage Temperature : -40°C to +125°C • O PCA Electronics |
2N3479 Diode ( Rectifier ) American Microsemiconductor |
2SC3479 Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3479 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for high definitio Inchange Semiconductor |
2SK3479 SWITCHING N-CHANNEL POWER MOSFET DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3479 2SK3479-S 2SK3479-ZJ 2SK3479-Z PACKAGE NEC |
2SK3479 MOS Field Effect Transistor SMD Type MOS Field Effect Transistor 2SK3479 TO-263 +0.1 1.27-0.1 MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on)1 = 11 m RDS(on)2 = 13 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 110 Kexin |
93479 256 x 9-Bit Static Random Access Memory
National Semiconductor |
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