EMBE0N10P データシート PDFこの部品の機能は「Field Effect Transistor」です。 |
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部品番号 |
EMBE0N10P Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 500mΩ ID 1.8A G UIS 100% Tested S Pb‐Free Excelliance MOS |
文字列「 EMBE0N10 」「 0N10P 」で始まる検索結果です。 |
部品説明 |
EMBE0N10JS Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 500mΩ ID 0.9A G UIS 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 Excelliance MOS |
EMBE0N10Q Field Effect Transistor N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 500mΩ ID 2.1A G UIS 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 Excelliance MOS |
001-04010 Smart Antenna An affordable way to add Automatic Vehicle Location capabilities for fleets that use wirelessly enabled portable computers (Cellular, 802.11 and radio networks supported) Specifications: GPS Receiver (other devices avail.) • SiRF Star III with WAAS Chipset • L1 Band, 1575.42 Track Star |
05010GOF Silicon Controlled Rectifier Microsemi Corporation |
05010GOF Silicon Controlled Rectifier Microsemi Corporation |
0505J1500101KQT High Q capacitors [email protected] www.syfer.com High Q capacitors MS range +44 1603 723310 +44 1603 723301 The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various te Syfer Technology |
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