| No | Part number | Description ( Function ) | Manufacturers | |
| 13 | EMB4 | General purpose (dual digital transistors) Transistors EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A General purpose (dual digital transistors) EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A !Features 1) Two DTA114T chips in a EMT or UMT or SMT package. !Equivalent circuit EMA4 / UMA4N (3) (2) (1) FMA4A (3) (4) (5) EMB4 / UMB4N (3) (2) (1) IMB4A (4) (5) (6) UMB8N (3) (2) (1) IMB8A (4) |
 ROHM Semiconductor |
|
| 12 | EMB4 | Dual Digital Transistors JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) EMB4 Dual Digital Transistors (PNP+PNP) SOT-563 FEATURES z Two DTA114T chips in a package Marking: B4 Absolute maximum ratings (Ta=25℃) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Coll |
 JCET |
|
| 11 | EMB4 | General purpose transistors General purpose transistors (dual digital transistors) EMB4 FEATURES z Two DTA114T chips in a package Marking: B4 Equivalent circuit (3) (2) (1) R1 R1 (4) (5) (6) SOT-563 1 Absolute maximum ratings (Ta=25℃) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation J |
 Jin Yu Semiconductor |
|
| 10 | EMB40A03K | Field Effect Transistor Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D1 D2 RDSON (MAX.) ID 40mΩ 4.5A G1 G2 S1 S2 Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage |
 Excelliance MOS |
|
| 9 | EMB40A06S | Field Effect Transistor Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 40mΩ ID 6A UIS, 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB40A06S LIMITS UNIT |
Excelliance MOS |
|
| 8 | EMB40P06A | Field Effect Transistor P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐60V D RDSON (MAX.) 62mΩ ID ‐17A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source |
Excelliance MOS |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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