Datasheet EM565168 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	EM565168	512K x 16 Pseudo SRAM EtronTech Rev 1.0 Features • Organized as 512K words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA •Deep power-down Current : 10uA (Memory cell data invalid) • Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) • Compatible with low power SRAM • Single Power Supply	Etron Technology

EM565 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
EM565168	512K x 16 Pseudo SRAM EtronTech Rev 1.0 Features • Organized as 512K words by 16 bits • Fast Cycle Time : 55ns, 70ns • Standby Current : 100uA •Deep power-down Current : 10uA (Memory cell data invalid) • Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) • Compatible with low power SRAM •	Etron Technology
EM565161BJ-70	512K x 16 Low Power SRAM EtronTech Features • Single Power Supply Voltage, 2.3 ~ 3.6 V • Power Down Features Using CE1#, CE2, LB# and UB# • Low Power Dissipation • Data retention Supply Voltage: 1.0V to 3.6V • Direct TTL Compatibility for All Input and Output • Wide Operating Temperature Rang	Etron Technology Inc.
EM565161BJ-55	512K x 16 Low Power SRAM EtronTech Features • Single Power Supply Voltage, 2.3 ~ 3.6 V • Power Down Features Using CE1#, CE2, LB# and UB# • Low Power Dissipation • Data retention Supply Voltage: 1.0V to 3.6V • Direct TTL Compatibility for All Input and Output • Wide Operating Temperature Rang	Etron Technology Inc.

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Número de pieza	Descripción	Fabricantes	PDF
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