Datasheet EM48AM3284LBA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	EM48AM3284LBA	512Mb (4M X 4Bank X 32) Synchronous DRAM eorex Features • Fully Synchronous to Positive Clock Edge • Single 1.8V +/- 0.1V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Latency (C/L) - 2 or 3 • Data Mask (DQM) for Read	eorex

EM48AM3284 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
EM48AM3284LBB	512Mb (4M x 4Bank x 32) Mobile Synchronous DRAM Revision History Revision 0.1 (May. 2010) - First release. Revision 0.2 (Sep. 2010) - Delete CL=2 parameters - Input Leakage Current = -2μA ~ +2μA - Change Supply Voltage Rating = -0.5 ~ +2.3 - Delete Deep Power Down Mode - Change AC timing paramters: tRC & tIS Revision 0.3 (No	Eorex
EM48AM3284LBA	512Mb (4M X 4Bank X 32) Synchronous DRAM eorex Features • Fully Synchronous to Positive Clock Edge • Single 1.8V +/- 0.1V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Latency (C/L) - 2 or 3 • Data	eorex

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