EM488M3244VBD データシート PDFこの部品の機能は「256mb Synchronous Dram」です。 |
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部品番号 |
EM488M3244VBD 256Mb Synchronous DRAM eorex Revision History Revision 0.1 (Dec. 2013) - First release EM488M3244VBD Dec. 2013 www.eorex.com 1/18 eorex EM488M3244VBD 256Mb (2M4Bank32) Synchronous DRAM Features • Fully Synchr Eorex |
文字列「 EM488M3244 」「 488M3244VBD 」で始まる検索結果です。 |
部品説明 |
EM488M3244LBB 256Mb Synchronous DRAM eorex Preliminary EM488M3244LBB 256Mb (2M×4Bank×32) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 1.8V ±0.1V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Pr Eorex |
EM488M3244VBA Synchronous DRAM eorex Features EM488M3244VBA 256Mb (2M×4Bank×32) Synchronous DRAM Description The EM488M3244VBA is Synchronous Dynamic Random Access Memory (SDRAM) organized as 2Meg words x 4 banks by 32 bits. All inputs and outputs are synchronized with the positive edge Eorex |
EM488M3244VBB 256Mb Synchronous DRAM eorex EM488M3244VBB 256Mb (2M×4Bank×32) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Eorex |
EM488M3244VBC 256Mb Synchronous DRAM eorex Preliminary EM488M3244VBC 256Mb (2M×4Bank×32) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 2.7V ~ 3.6V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Pr Eorex |
EM488M3244VTB 256Mb Synchronous DRAM eorex EM488M3244VTB 256Mb (2M×4Bank×32) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Eorex |
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