EL2045CS データシート PDFこの部品の機能は「Low-power 100 Mhz Gain-of-2 Stable Operational Amplifier」です。 |
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部品番号 |
EL2045CS Low-Power 100 MHz Gain-of-2 Stable Operational Amplifier EL2045C EL2045C Low-Power 100 MHz Gain-of-2 Stable Operational Amplifier Features 100 MHz gain-bandwidth product Gain-of-2 stable Low supply current e 5 2 mA at VS e g 15V Wide supply range Elantec |
文字列「 EL2045 」「 2045CS 」で始まる検索結果です。 |
部品説明 |
EL2045 Low-Power 100MHz Gain-of-2 Stable Operational Amplifier ® EL2045 Data Sheet February 21, 2002 FN7030 Low-Power 100MHz Gain-of-2 Stable Operational Amplifier The EL2045 is a high speed, low power, low cost monolithic operational amplifier built on Elantec's proprietary complementary bipolar process. The EL2045 is gain-of-2 stable an Intersil |
EL2045C Low-Power 100 MHz Gain-of-2 Stable Operational Amplifier EL2045C EL2045C Low-Power 100 MHz Gain-of-2 Stable Operational Amplifier Features 100 MHz gain-bandwidth product Gain-of-2 stable Low supply current e 5 2 mA at VS e g 15V Wide supply range e g 2V to g 18V dual-supply e 2 5V to 36V single-supply High slew rate e 275 V Elantec |
EL2045CN Low-Power 100 MHz Gain-of-2 Stable Operational Amplifier EL2045C EL2045C Low-Power 100 MHz Gain-of-2 Stable Operational Amplifier Features 100 MHz gain-bandwidth product Gain-of-2 stable Low supply current e 5 2 mA at VS e g 15V Wide supply range e g 2V to g 18V dual-supply e 2 5V to 36V single-supply High slew rate e 275 V Elantec |
2SD2045 Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid/ Motor and General Purpose) Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2045 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 –55 to +150 2SD2045 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A I Sanken electric |
2SD2045 NPN - PNP Plastic-Encapsulate Transistors Elektronische Bauelemente 2SD2045 NPN - PNP Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURE 40V complementary device Mounting cost and area can be cut in half High hFE MARKING 2045 PACKAGING DIMENSION Packag SeCoS |
2SD2045 Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2045 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000 INCHANGE |
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