| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | EL2004CG | 350 MHz FET Buffer EL2004 EL2004C EL2004 EL2004C 350 MHz FET Buffer Features Slew rate 2500 V ms Rise time 1 ns Bandwidth 350 MHz ELH0033 pin compatible g 5 to g 15V operation 100 mA output current MIL-STD-883B Rev C devices manufactured in U S A General Description The EL2004 is a very high-speed FET input buffer line driver designed for unity gain applications at both high curre |
 Elantec |
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Recommended search results related to EL2004CG |
| Part No | Description ( Function) | Manufacturers | |
| EL2004 | 350 MHz FET Buffer EL2004 EL2004C EL2004 EL2004C 350 MHz FET Buffer Features Slew rate 2500 V ms Rise time 1 ns Bandwidth 350 MHz ELH0033 pin compatible g 5 to g 15V operation 100 mA output current MIL-STD-883B Rev C devices manufactured in U S A General Description The EL2004 is a |
Elantec |
|
| EL2004G | 350 MHz FET Buffer EL2004 EL2004C EL2004 EL2004C 350 MHz FET Buffer Features Slew rate 2500 V ms Rise time 1 ns Bandwidth 350 MHz ELH0033 pin compatible g 5 to g 15V operation 100 mA output current MIL-STD-883B Rev C devices manufactured in U S A General Description The EL2004 is a |
Elantec |
|
| EL2004L | 350 MHz FET Buffer EL2004 EL2004C EL2004 EL2004C 350 MHz FET Buffer Features Slew rate 2500 V ms Rise time 1 ns Bandwidth 350 MHz ELH0033 pin compatible g 5 to g 15V operation 100 mA output current MIL-STD-883B Rev C devices manufactured in U S A General Description The EL2004 is a |
Elantec |
|
| EL2004MIL | 350 MHz FET Buffer EL2004 EL2004C EL2004 EL2004C 350 MHz FET Buffer Features Slew rate 2500 V ms Rise time 1 ns Bandwidth 350 MHz ELH0033 pin compatible g 5 to g 15V operation 100 mA output current MIL-STD-883B Rev C devices manufactured in U S A General Description The EL2004 is a |
Elantec |
|
| NEL2004F02-24 | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates em |
 NEC |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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